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| Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. These devices may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT168 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT168 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. MAX. UNIT B 200 0.5 0.8 8 D 400 0.5 0.8 8 E 500 0.5 0.8 8 G 600 0.5 0.8 8 V A A A PINNING - TO92 variant PIN 1 2 3 DESCRIPTION anode gate cathode PIN CONFIGURATION SYMBOL a k 321 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tlead 83 C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/s -40 B 2001 MAX. D 4001 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 E 5001 G 6001 UNIT V A A A A A2s A/s A V V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient pcb mounted; lead length = 4mm CONDITIONS MIN. - BT168 series TYP. 150 MAX. 60 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 k VD = 12 V; IGT = 0.5 mA; RGK = 1 k IT = 1 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 C; RGK = 1 k MIN. 20 0.2 TYP. 50 2 2 1.2 0.5 0.3 0.05 MAX. 200 6 5 1.35 0.8 0.1 UNIT A mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK = 1 k MIN. TYP. 25 2 100 MAX. UNIT V/s s s September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168 series 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT169 Tc(max) / C 77 a = 1.57 83 1.9 89 95 101 107 113 10 ITSM / A BT169 IT I TSM 8 2.2 2.8 time T Tj initial = 25 C max 6 4 4 2 119 0 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 125 0.7 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). ITSM / A BT169 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 2 IT(RMS) / A BT169 1.5 100 1 10 IT T I TSM 0.5 time Tj initial = 25 C max 1 10us 100us T/s 1ms 10ms 0 0.01 0.1 surge duration / s 1 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. IT(RMS) / A Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead 83C. VGT(Tj) VGT(25 C) 1 BT169 1.6 83 C BT151 0.8 1.4 1.2 1 0.6 0.4 0.8 0.2 0.6 0 50 Tlead / C 100 150 0 -50 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus lead temperature, Tlead. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. September 1997 3 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168 series 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT169 5 IT / A Tj = 125 C Tj = 25 C BT169 4 Vo = 1.067 V Rs = 0.187 ohms typ max 3 2 1 1 0.5 0 -50 0 0 0.5 1 VT / V 1.5 2 2.5 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 BT169 100 Zth j-lead (K/W) BT169 10 1 P D tp 0.1 t 0 -50 0 50 Tj / C 100 150 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj, RGK = 1 k. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. dVD/dt (V/us) 3 2.5 BT169 1000 100 2 1.5 1 0.5 0 -50 1 10 RGK = 1 kohms 0 50 Tj / C 100 150 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj, RGK = 1 k. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. September 1997 4 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g BT168 series 2.54 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 2.5 max 12.7 min 321 Notes 1. Epoxy meets UL94 V0 at 1/8". 0.48 0.40 0.40 min Fig.13. TO92; plastic envelope. September 1997 5 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT168 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100 |
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